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Barrier Diodes. RB520S-30 Datasheet

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Barrier Diodes. RB520S-30 Datasheet






RB520S-30 Diodes. Datasheet pdf. Equivalent






RB520S-30 Diodes. Datasheet pdf. Equivalent


RB520S-30

Part

RB520S-30

Description

SMD Schottky Barrier Diodes



Feature


SMD Schottky Barrier Diodes RB520S-30 Io = 200 mA VR = 30 Volts RoHS Device Fea tures Low reverse current. Designed for mounting on small surface. Extremely t hin package. Majority carrier conductio n. Mechanical data Case: SOD-523 standa rd package, molded plastic. Terminals: solderable per MIL-STD-750 ,method 2026 . Marking code: cathode band & B Mounti ng position: Any W.
Manufacture

Comchip

Datasheet
Download RB520S-30 Datasheet


Comchip RB520S-30

RB520S-30; eight: 0.0012 gram(approx.). Circuit Dia gram + - SOD-523 0.008(0.20) REF 0.0 14(0.35) 0.010(0.25) 0.051(1.30) 0.043 (1.10) 0.067(1.70) 0.059(1.50) 0.033(0 .85) 0.030(0.75) 0.031(0.77) 0.020(0.5 1) 0.006(0.15) 0.003(0.08) 0.003(0.07 ) 0.001(0.01) Dimensions in inches and (millimeter) Maximum Ratings (at TA=25 °C unless otherwise noted) Parameter Conditions DCReve.


Comchip RB520S-30

rse voltage Mean rectkfying current Sym bol Min Typ Max Unit VR 30 V IO 200 mA Peak forward surge current 8.3ms sing le half sine-wave superimposed on rate load(JEDEC method) IFSM 1A Storage t emperature Junction temperature TSTG T j -40 +125 +125 OC OC .

Part

RB520S-30

Description

SMD Schottky Barrier Diodes



Feature


SMD Schottky Barrier Diodes RB520S-30 Io = 200 mA VR = 30 Volts RoHS Device Fea tures Low reverse current. Designed for mounting on small surface. Extremely t hin package. Majority carrier conductio n. Mechanical data Case: SOD-523 standa rd package, molded plastic. Terminals: solderable per MIL-STD-750 ,method 2026 . Marking code: cathode band & B Mounti ng position: Any W.
Manufacture

Comchip

Datasheet
Download RB520S-30 Datasheet




 RB520S-30
SMD Schottky Barrier Diodes
RB520S-30
Io = 200 mA
VR = 30 Volts
RoHS Device
Features
Low reverse current.
Designed for mounting on small surface.
Extremely thin package.
Majority carrier conduction.
Mechanical data
Case: SOD-523 standard package,
molded plastic.
Terminals: solderable per MIL-STD-750
,method 2026.
Marking code: cathode band & B
Mounting position: Any
Weight: 0.0012 gram(approx.).
Circuit Diagram
+
-
SOD-523
0.008(0.20)
REF
0.014(0.35)
0.010(0.25)
0.051(1.30)
0.043(1.10)
0.067(1.70)
0.059(1.50)
0.033(0.85)
0.030(0.75)
0.031(0.77)
0.020(0.51)
0.006(0.15)
0.003(0.08)
0.003(0.07)
0.001(0.01)
Dimensions in inches and (millimeter)
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Conditions
DCReverse voltage
Mean rectkfying current
Symbol Min Typ Max Unit
VR 30 V
IO 200 mA
Peak forward surge current
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
IFSM
1A
Storage temperature
Junction temperature
TSTG
Tj
-40
+125
+125
OC
OC
Electrical Characteristics (At Ta=25°C, unless otherwise noted)
Parameter
Forward voltage
Reverse current
Conditions
IF = 200 mA
VR = 10 V
Symbol Min Typ Max Unit
VF 0.6 V
IR 1 µA
QW-BB023
Comchip Technology CO., LTD.
REV:B
Page 1




 RB520S-30
SMD Schottky Barrier Diodes
RATING AND CHARACTERISTIC CURVES (RB520S-30)
Fig.1 Forward Characteristics
1
100m
10m
1m
100μ
10μ
1μ
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
Forward Voltage, (V)
Fig. 2 - Reverse characteristics
1m
100u
O
125 C
10u
O
75 C
1u
100n
10n
1n
0
O
25 C
O
-25 C
5 10 15 20 25
Reverse voltage, (V)
30
Fig. 3 - Capacitance between
terminals characteristics
100
f = 1 MHz
10
1
0 5 10 15 20 25 30
Reverse voltage, (V)
Fig.4 - Derating curve
(Mounting on glass epoxy PCBs)
100
80
60
40
20
0
0 25 50 75 100 125 150
Ambient temperature, (°C)
QW-BB023
Comchip Technology CO., LTD.
REV:B
Page 2



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