POWER TRANSISTOR. BLY91C Datasheet

BLY91C TRANSISTOR. Datasheet pdf. Equivalent


Part BLY91C
Description NPN SILICON RF POWER TRANSISTOR
Feature BLY91C NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLY91C is Designed for 28 V Large Sign.
Manufacture Advanced Semiconductor
Datasheet
Download BLY91C Datasheet


BLY91C NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The AS BLY91C Datasheet
BLY91C Datasheet
Recommendation Recommendation Datasheet BLY91C Datasheet




BLY91C
BLY91C
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLY91C is Designed for
28 V Large Signal Class A,B and C
Amplifier Applications up to 175 MHz.
FEATURES INCLUDE:
Emitter Ballasting
Gold Metalization
3/8" SOE Stud Package
MAXIMUM RATINGS
IC 1.0 A
VCE 35 V
VCB 65 V
PDISS
20 W @ TC = 25 °C
TJ -65 °C to + 200 °C
TSTG
-65 °C to + 150 °C
θJC 8.7 °C/W
PACKAGE STYLE .380" 4L STUD
1 = COLLECTOR
2 & 4 = EMITTER
3 = BASE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BVCES
IC = 200 mA
BVCEO
IC = 10 mA
BVEBO
IE = 1.0 mA
ICES VCE = 36 V
hFE VCE = 5.0 V IC = 400 mA
COB
VCB = 30 V
f = 1.0 MHz
PG
ηC VCC =28 V
POUT = 8.0 W
f = 175 MHz
MINIMUM TYPICAL MAXIMUM
65
35
4.0
1.0
10 100
UNITS
V
V
V
mA
---
15 pF
12.0 13.0
65
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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