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BLY90

Advanced Semiconductor
Part Number BLY90
Manufacturer Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Published Mar 23, 2005
Detailed Description BLY90 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLY90 is Designed for Class A,B and C, 12.5 V High Band Appl...
Datasheet PDF File BLY90 PDF File

BLY90
BLY90

Overview
BLY90 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLY90 is Designed for Class A,B and C, 12.
5 V High Band Applications up to 175 MHz.
PACKAGE STYLE .
380 4L STUD .
112x45° A FEATURES: • Common Emitter • PG = 5.
0 dB at 50 W/175 MHz • Omnigold™ Metalization System B C E ØC E B H I J D MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 8.
0 A 36 V 18 V 4.
0 V 130 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.
35 °C/W DIM A B C D E F G H I J #8-32 UNC-2A F E G MINIMUM inches / mm MAXIMUM inches / mm .
220 / 5.
59 .
980 / 24.
89 .
370 / 9.
40 .
004 / 0.
10 .
320 / 8.
13 .
100 / 2.
54 .
450 / 11.
43 .
090 / 2.
29 .
155 / 3.
94 .
230 / 5.
84 .
385 / 9.
78 .
007 / 0.
18 .
330 / 8.
38 .
130 / 3.
30 .
4...


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