TC58NVM9S3ETA00
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
512M BIT (64M × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58NVM9S3E is a single 3.3V 512Mbit (553,648,128bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 512blocks. The device has a 2112-byte static registers w...
