N-Channel IGBT. GT40WR21 Datasheet
Discrete IGBTs Silicon N-Channel IGBT
• Dedicated to Voltage-Resonant Inverter Switching Applications
Note: The product(s) described herein should not be used for any other application.
(1) 6.5th generation
(2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip.
(3) Enhancement mode
(4) High-speed switching
IGBT : tf = 0.15 µs (typ.) (IC = 40 A)
FWD : trr = 1.00 µs (typ.) (IF = 15 A)
(5) Low saturation voltage : VCE(sat) = 2.9 V (typ.) (IC = 40 A)
(6) High junction temperature : Tj = 175 (max)
3. Packaging and Internal Circuit
Start of commercial production
4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified)
Collector current (DC)
Collector current (1 ms)
Diode forward current (DC)
Diode forward current (100 µs)
Collector power dissipation
(Tc = 25)
-55 to 175
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
In general, loss of IGBT increases more when it has positive temperature coefficient and gets higher
In case that the temperature rise due to loss of IGBT exceeds the heat release capacity of a device, it leads
to thermorunaway and results in destruction.
Therefore, please design heat release of a device with due consideration to the temperature rise of IGBT.
Note 1: Ensure that the junction temperature does not exceed 175.
5. Thermal Characteristics
Junction-to-case thermal resistance