Power MOSFET. FNK3085 Datasheet

FNK3085 MOSFET. Datasheet pdf. Equivalent

Part FNK3085
Description P-Channel Power MOSFET
Feature FNK P-Channel Enhancement Mode Power MOSFET FNK3085 Description TheFNK3085 uses advanced trench te.
Manufacture FNK
Datasheet
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FNK P-Channel Enhancement Mode Power MOSFET FNK3085 Descri FNK3085 Datasheet
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FNK3085
FNK P-Channel Enhancement Mode Power MOSFET
FNK3085
Description
TheFNK3085 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =-30V,ID =-85A
R DS(ON) < 10.2m@ VGS=-10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Application
Battery and loading switching
Schematic diagram
TO-220FB-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK3085
FNK3085
TO-220
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-30
±20
-85
-340
130
0. 28
288
-55 To 150
Unit
V
V
A
A
W
W/
mJ
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
3.6 /W
FNK-Semiconductor
1/7
Nov.2016.Rev.1.0



FNK3085
FNK3085
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
IDSS VDS=-30V,VGS=0V
IGSS VGS=±20V,VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-10A
Forward Transconductance
Dynamic Characteristics (Note4)
gFS VDS=-10V,ID=-15A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=-15V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
td(on)
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tr
td(off)
tf
VDD=-15V,ID=-10A
VGS=-10V,RGEN=6
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS=-15V,ID=-10A,
VGS=-10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD VGS=0V,IS=-10A
IS
Reverse Recovery Time
Reverse Recovery Charge
trr TJ = 25°C, IF = -10A
Qrr di/dt = 100A/μs(Note3)
Min Typ Max
-30 -33
-
--
1
- - ±100
-1 -1.5 -2.5
- 7.6 10.2
- 20
-
- 4965
- 600
- 420
-
-
-
- 13
- 12
- 50
- 14
- 84
- 11.7
- 25
-
-
-
-
-
-
-
- -0.85 -1.2
- - -50
--
45
--
43
Unit
V
μA
nA
V
m
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=-15V,VG=-10V,L=0.5mH,Rg=25
FNK-Semiconductor
2/7
Nov.2016.Rev.1.0





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