DatasheetsPDF.com

C3M0075120J

Part Number	C3M0075120J
Manufacturer	CREE
Description	Silicon Carbide Power MOSFET
Published	Mar 23, 2018
Detailed Description	VDS 1200 V C3M0075120J ID @ 25˚C 30 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 75 m...
Datasheet	C3M0075120J PDF File

Overview

VDS 1200 V C3M0075120J ID @ 25˚C 30 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 75 mΩ N-Channel Enhancement Mode Features Package • C3MTM SiC MOSFET technology • Low impedance package with driver source pin • 7mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency Applications...

Similar Datasheet

C3M0075120D Silicon Carbide Power MOSFET - CREE
C3M0075120J Silicon Carbide Power MOSFET - CREE
C3M0075120K Silicon Carbide Power MOSFET - CREE
C3M0075120K-A Silicon Carbide Power MOSFET - Wolfspeed

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)