Power MOSFET. C3M0075120J Datasheet

C3M0075120J MOSFET. Datasheet pdf. Equivalent


Part C3M0075120J
Description Silicon Carbide Power MOSFET
Feature VDS 1200 V C3M0075120J ID @ 25˚C 30 A Silicon Carbide Power MOSFET TM C3M MOSFET Technolo.
Manufacture CREE
Datasheet
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C3M0075120J
VDS 1200 V
C3M0075120J
ID @ 25˚C
30 A
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
RDS(on) 75 m
N-Channel Enhancement Mode
Features
Package
C3MTM SiC MOSFET technology
Low impedance package with driver source pin
7mm of creepage distance between drain and source
High blocking voltage with low on-resistance
High-speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
Benefits
Reduce switching losses and minimize gate ringing
Higher system efficiency
Reduce cooling requirements
Increase power density
Increase system switching frequency
Applications
TAB
Drain
1 2 34 5 6 7
G KS S S S S S
Drain
(TAB)
Gate
(Pin 1)
Driver
Source
(Pin 2)
Power
Source
(Pin 3,4,5,6,7)
Renewable energy
EV battery chargers
High voltage DC/DC converters
Switch Mode Power Supplies
Part Number
C3M0075120J
Package
TO-263-7
Marking
C3M0075120J
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage (dynamic)
Gate - Source Voltage (static)
ID Continuous Drain Current
1200
-8/+19
-4/+15
30
19.7
ID(pulse) Pulsed Drain Current
80
PD Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL Solder Temperature
Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V
Note (2): MOSFET can also safely operate at 0/+15 V
113.6
-55 to
+150
260
Unit Test Conditions
V VGS = 0 V, ID = 100 μA
V AC (f >1 Hz)
V Static
VGS = 15 V, TC = 25˚C
A
VGS = 15 V, TC = 100˚C
A Pulse width tP limited by Tjmax
W TC=25˚C, TJ = 150 ˚C
˚C
˚C 1.6mm (0.063”) from case for 10s
1 C3M0075120J Rev. -, 07-2017
Note
Note: 1
Note: 2
Fig. 19
Fig. 22
Fig. 20



C3M0075120J
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Source Leakage Current
RDS(on) Drain-Source On-State Resistance
gfs Transconductance
Min.
1200
1.7
Typ.
2.5
2.0
1
10
75
100
9.0
8.3
Ciss Input Capacitance
1350
Coss Output Capacitance
58
Crss Reverse Transfer Capacitance
3
Eoss Coss Stored Energy
33
EON Turn-On Switching Energy (Body Diode FWD)
230
EOFF Turn-Off Switching Energy (Body Diode FWD)
td(on) Turn-On Delay Time
85
17
tr Rise Time
9
td(off)
Turn-Off Delay Time
29
tf
RG(int)
Qgs
Qgd
Qg
Fall Time
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
10
10.5
14
21
51
Max.
4.0
100
250
90
Unit
V
V
V
μA
nA
m
S
Test Conditions
VGS = 0 V, ID = 100 μA
VDS = VGS, ID = 5 mA
VDS = VGS, ID = 5 mA, TJ = 150ºC
VDS = 1200 V, VGS = 0 V
VGS = 15 V, VDS = 0 V
VGS = 15 V, ID = 20 A
VGS = 15 V, ID = 20A, TJ = 150ºC
VDS= 20 V, IDS= 20 A
VDS= 20 V, IDS= 20 A, TJ = 150ºC
pF VGS = 0 V, VDS = 1000 V
f = 1 MHz
VAC = 25 mV
μJ
μJ VDS = 800 V, VGS = -4 V/15 V, ID = 20A,
RG(ext) = 0 Ω, L= 156 μH, TJ = 150ºC
VDD = 800 V, VGS = -4 V/15 V
ns
ID = 20 A, RG(ext) = 0 Ω,
Timing relative to VDS
Inductive load
Ω f = 1 MHz, VAC = 25 mV
VDS = 800 V, VGS = -4 V/15 V
nC ID = 20 A
Per IEC60747-8-4 pg 21
Reverse Diode Characteristics (TC = 25˚C unless otherwise specified)
Symbol Parameter
VSD Diode Forward Voltage
IS
IS, pulse
trr
Qrr
Irrm
Continuous Diode Forward Current
Diode pulse Current
Reverse Recover time
Reverse Recovery Charge
Peak Reverse Recovery Current
Typ.
4.5
4.0
80
18
220
19
Max.
22.4
Unit
V
V
A
A
ns
nC
A
Test Conditions
VGS = -4 V, ISD = 10 A
VGS = -4 V, ISD = 10 A, TJ = 150 °C
VGS = -4 V
VGS = -4 V, pulse width tP limited by Tjmax
VGS = -4 V, ISD = 20 A, VR = 800 V
dif/dt = 3600 A/µs, TJ = 150 °C
Note
Fig. 11
Fig. 4,
5, 6
Fig. 7
Fig. 17,
18
Fig. 16
Fig. 26,
29
Fig. 27,
28, 29
Fig. 12
Note
Fig. 8,
9, 10
Note 1
Note 1
Note 1,
Fig. 29
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance from Junction to Case
Thermal Resistance From Junction to Ambient
Max.
1.1
40
Unit
°C/W
Test Conditions
Note
Fig. 21
2 C3M0075120J Rev. -, 07-2017





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