Switching Diode. BAS21W Datasheet

BAS21W Diode. Datasheet pdf. Equivalent


Part BAS21W
Description Surface Mount Switching Diode
Feature Production specification Surface Mount Switching Diode BAS19W/BAS20W/BAS21W FEATURES  Fast switch.
Manufacture GME
Datasheet
Download BAS21W Datasheet


Features • Fast Switching Speed • Surface Mount Package Idea BAS21W Datasheet
BAS21W series High-voltage switching diodes Rev. 01 — 9 Octo BAS21W Datasheet
Small Signal Product BAS19W/20W/21W Taiwan Semiconductor S BAS21W Datasheet
BAS19W, BAS20W, BAS21W Plastic-Encapsulate Diodes FEATURES BAS21W Datasheet
SURFACE MOUNT FAST SWITCHING DIODE BAS19W thru BAS21W REVER BAS21W Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 P BAS21W Datasheet
® WON-TOP ELECTRONICS BAS19W – BAS21W SURFACE MOUNT FAST SW BAS21W Datasheet
Technical Data Data Sheet N0588, Rev. B BAS19W-BAS21W SURFA BAS21W Datasheet
BAS19W, BAS20W, BAS21W Silicon Epitaxial Planar Diodes High BAS21W Datasheet
SMD Switching Diode BAS19W THRU BAS21W Formosa MS List Lis BAS21W Datasheet
Recommendation Recommendation Datasheet BAS21W Datasheet




BAS21W
Production specification
Surface Mount Switching Diode BAS19W/BAS20W/BAS21W
FEATURES
Fast switching speed.
High conductance.
Pb
Lead-free
For general purpose switching applications.
Surface mount package ideally suited
for automatic insertion.
APPLICATIONS
For general purpose switching applications.
SOT-323
ORDERING INFORMATION
Type No.
BAS19W
BAS20W
BAS21W
Marking
KA8
KT2
KT3
Package Code
SOT-323
SOT-323
SOT-323
MAXIMUM RATING @ Ta=25unless otherwise specified
Parameter
Symbol BAS19W BAS20W BAS21W
Repetitive Peak reverse voltage
Diode reverse voltage
RMS Reverse Voltage
Average rectified output current
VRRM 120 200 250
VR 100 150 200
VR(RMS)
71
106 141
IO 200
Forward Surge Current
t=1.0μS
t=1.0S
IFSM
2.5
0.5
Power Dissipation
Junction temperature
Storage temperature range
Pd
Tj
Tstg
200
150
-65 to +150
Unit
V
V
V
mA
A
mW
F016
Rev.A
www.gmesemi.com
1



BAS21W
Production specification
Surface Mount Switching Diode BAS19W/BAS20W/BAS21W
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Reverse breakdown voltage BAS19W
BAS20W
BAS21W
Reverse voltage leakage current
BAS19W
BAS20W
BAS21W
Forward voltage
Diode capacitance
Reverse recovery time
Symbol Test conditions
V(BR)R IR= 100μA
IR
VR=100V
VR=150V
VR=200V
VF
IF=100mA
IF=200mA
CD VR=0V f=1MHz
trr IF=IR=30mA RL=100
MIN
120
200
250
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
MAX
100
1.0
1.25
5
50
UNIT
V
nA
V
pF
ns
F016
Rev.A
www.gmesemi.com
2







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)