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BF2030R

Infineon Technologies AG
Part Number BF2030R
Manufacturer Infineon Technologies AG
Description Silicon N-Channel MOSFET Tetrode
Published Mar 23, 2005
Detailed Description Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • ...
Datasheet PDF File BF2030R PDF File

BF2030R
BF2030R

Overview
Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BF2030.
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AGC RF Input RG1 G2 G1 VGG GND Drain RF Output + DC ESD (Electrostatic discharge) sensitive device, observe handling precaution! Class 2 (2000V - 4000V) pin to pin Human Body Model Type Package Pin Configuration BF2030 SOT143 1= S 2=D 3=G2 4=G1 - - BF2030R SOT143R 1= D 2=S 3=G1 4=G2 - - BF2030W SOT343 1= D 2=S 3=G1 4=G2 - - Maximum Ratings Parameter Symbol Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissip...


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