DatasheetsPDF.com

Mode MOSFET. HY3410B Datasheet

DatasheetsPDF.com

Mode MOSFET. HY3410B Datasheet






HY3410B MOSFET. Datasheet pdf. Equivalent




HY3410B MOSFET. Datasheet pdf. Equivalent





Part

HY3410B

Description

N-Channel Enhancement Mode MOSFET



Feature


HY3410P/M/B/PS/PM/MF Absolute Maximum R atings Symbol Parameter Rating Comm on Ratings (TC=25°C Unless Otherwise N oted) VDSS Drain-Source Voltage VGSS G ate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Ra nge IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 100 ±25 175 -55 to 175 140 IDM Pulsed Drain Current * ID C.
Manufacture

HOOYI

Datasheet
Download HY3410B Datasheet


HOOYI HY3410B

HY3410B; ontinuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-J unction to Case RθJA Thermal Resistanc e-Junction to Ambient Avalanche Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 550** 140 100 285 143 0.53 6 2.5 EAS Avalanche Energy, Single Pulse d L=0.5mH Note * Repetitive rating ; pulse width limiited by junction temper ature ** Drain current is.


HOOYI HY3410B

limited by junction temperature *** VD= 80V 992*** Electrical Characteristics (T C = 25°C Unless Otherwise No ted) Unit V °C °C A A A W °C/W mJ Symbol Parameter Test Conditions Sta tic Characteristics BVDSS Drain-Source Breakdown Volt .


HOOYI HY3410B

.

Part

HY3410B

Description

N-Channel Enhancement Mode MOSFET



Feature


HY3410P/M/B/PS/PM/MF Absolute Maximum R atings Symbol Parameter Rating Comm on Ratings (TC=25°C Unless Otherwise N oted) VDSS Drain-Source Voltage VGSS G ate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Ra nge IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 100 ±25 175 -55 to 175 140 IDM Pulsed Drain Current * ID C.
Manufacture

HOOYI

Datasheet
Download HY3410B Datasheet




 HY3410B




 HY3410B
HY3410P/M/B/PS/PM/MF
Absolute Maximum Ratings
Symbol
Parameter
Rating
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
TC=25°C
100
±25
175
-55 to 175
140
IDM Pulsed Drain Current *
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Avalanche Ratings
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
550**
140
100
285
143
0.53
62.5
EAS Avalanche Energy, Single Pulsed
L=0.5mH
Note * Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=80V
992***
Electrical Characteristics
(T
C
=
25°C
Unless
Otherwise
Noted)
Unit
V
°C
°C
A
A
A
W
°C/W
mJ
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON)* Drain-Source On-state Resistance
Diode Characteristics
VGS=0V, IDS=250µA
VDS=100V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±25V, VDS=0V
VGS=10V, IDS=70A
VSD*
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=70A, VGS=0V
ISD=70A, dlSD/dt=100A/µs
HY3410
Min. Typ. Max.
100 -
-
- -1
- - 10
2.0 3.0 4.0
- - ±100
- 6.2 7.5
- 0.8 1
- 65 -
- 103 -
Unit
V
µA
V
nA
m
V
ns
nC
2




 HY3410B
HY3410P/M/B/PS/PM/MF
Electrical Characteristics (Cont.)
(T
C
=
25°C
Unless
Otherwise
Noted)
Symbol
Parameter
Test Conditions
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
Tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
Gate Charge Characteristics
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=25V,
Frequency=1.0MHz
VDD=50V, RG= 6 ,
IDS =70A, VGS=10V,
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=80V, VGS=10V,
IDS=70A
Note * : Pulse test ; pulse width 300µs, duty cycle2%.
.
HY3410
Min. Typ. Max.
- 1.7 -
- 6140 -
- 943 -
- 490 -
- 23
-
- 39
-
- 86 -
- 46 -
- 130 -
- 25 -
- 32 -
Unit
pF
ns
nC
3



Recommended third-party HY3410B Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)