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KTC4379

GME

NPN Silicon Epitaxial Planar Transistor


Description
Production specification NPN Silicon Epitaxial Planar Transistor FEATURES Pb  High speed switching time. Lead-free  Low saturation voltage:VCE(sat)=0.5V(Max).  PC=1~2W(Mounted on ceramic substrate).  Small flat package.  Complementary: KTA1666. KTC4379 APPLICATIONS  Power amplifier application.  Power switching application. ORDERING INFORM...



GME

KTC4379

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