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BL2300
N-Channel Power Mosfet
Description
Production specification N-Channel Enhancement Mode Field Effect
Transistor
FEATURES VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A Pb VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A Lead-free VDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A Electrostatic Sensitive Devices. BL2300 APPLICATIONS Power Management in Note book. Portable Equipment. Battery Powered Syst...
GME
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