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BL2303

P-Channel Power Mosfet

Description

Production specification P-Channel Enhancement Mode Field Effect Transistor BL2303 FEATURES  Electrostatic Sensitive Devices.  VDS (V) = -30V  ID = -2.7A(VGS =-10V)  RDS(ON) < 190mΩ (VGS = -10V) RDS(ON) < 330mΩ (VGS = -4.5V) Pb Lead-free APPLICATIONS  P-channel enhancement mode effect transistor.  Switching application. ORDERING INFORMATION Type N...

GME

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