CEV2309
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-20V, -1.2A, RDS(ON) = 165mΩ @VGS = -4.5V. RDS(ON) = 300mΩ @VGS = -2.5V.
High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-323 package.
D
DS G
SOT-323(SC-70)
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise no...
