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2N6367

ETC

NPN SILICON RF POWER TRANSISTOR


Description
2N6367 (SILICON) The RF Line NPN SILICON RF POWER TRANSISTOR ยท . . designed primarily for driver applications in 12.5 volt single~ideband amplifiers from 2.0 to 30 MHz. Optimized for Operation from a 12:5 Volt Supply Power Output@ 12.5 Vdc, 30 MHz -:-H.O W (PEP) Intermodulation Distortion at Ra.ted Powe, Output- IMD .= -30 dB (Max) 9 W (PEP) - 30 MHz...



ETC

2N6367

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