DatasheetsPDF.com
2N5717
SILICON LOW NOISE N-CHANNEL JUNCTION FET
Description
2N5716 (SILICON) 2N5717 2N5718 SILICON LOW NOISE N·CHANNEL JUNCTION FIELD·EFFECT
TRANSISTOR
S Depletion Mode Junction Field·Effect
Transistor
s designed for audio amplifiers in low·power or battery operated applications. Low Zero- Gate-Voltage Drain Current @ VDS = 15 Vdc IDSS= 5O/lAdc to 250 /lAde - 2N5716 200 /lAde to 1.0 mAde - 2N5717 800 /lAde to 4.0 mA...
ETC
Download 2N5717 Datasheet
Similar Datasheet
2N5716
SILICON LOW NOISE N-CHANNEL JUNCTION FET
- ETC
2N5717
SILICON LOW NOISE N-CHANNEL JUNCTION FET
- ETC
2N5718
SILICON LOW NOISE N-CHANNEL JUNCTION FET
- ETC
2N5724
SCR
- Microsemi
2N5725
SCR
- Microsemi
2N5726
SCR
- Microsemi
2N5727
SCR
- Microsemi
2N5728
SCR
- Microsemi
2N5729
Bipolar NPN Device
- Seme LAB
2N5730
NPN Transistor
- SSDI
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)