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2SD798 Datasheet, Equivalent, NPN Transistor.

NPN Transistor

NPN Transistor

 

 

 

Part 2SD798
Description NPN Transistor
Feature : SILICON NPN TRIPLE DIFFUSED TYPE (DARL INGTON POWER) .
2SD798 IGNITER APPLIC ATIONS.
HIGH VOLTAGE SWITCHING APPLICAT IONS.
FEATURES
• High DC Current Gain : hFE=1500 (Min.
)(V CE=2V, I C=2A) IN DUSTRIAL APPLICATIONS Unit in mm IQ.
SMA X.
, ,03.
6±a.
2 MAXIMUM RATINGS (Ta=25 °C) CHARACTERISTIC Collector-Base Vo ltage Collector-Emitter Voltage Emitte r-Base Voltage Collector Current Base Current Collector Power Dissipation (T c=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO v EBO ic IB PC T J Tstg RATING UNIT 600 V 300 V 5V 6A 1A 30 W 150 -55^150 ° C °C 2.
54 2.
54 d .
Manufacture Toshiba
Datasheet
Download 2SD798 Datasheet
Part 2SD798
Description NPN Transistor
Feature : SILICON NPN TRIPLE DIFFUSED TYPE (DARL INGTON POWER) .
2SD798 IGNITER APPLIC ATIONS.
HIGH VOLTAGE SWITCHING APPLICAT IONS.
FEATURES
• High DC Current Gain : hFE=1500 (Min.
)(V CE=2V, I C=2A) IN DUSTRIAL APPLICATIONS Unit in mm IQ.
SMA X.
, ,03.
6±a.
2 MAXIMUM RATINGS (Ta=25 °C) CHARACTERISTIC Collector-Base Vo ltage Collector-Emitter Voltage Emitte r-Base Voltage Collector Current Base Current Collector Power Dissipation (T c=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO v EBO ic IB PC T J Tstg RATING UNIT 600 V 300 V 5V 6A 1A 30 W 150 -55^150 ° C °C 2.
54 2.
54 d .
Manufacture Toshiba
Datasheet
Download 2SD798 Datasheet

2SD798

2SD798
2SD798

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