TYPE TRANSISTOR. 2SD798 Datasheet

2SD798 Datasheet PDF, Equivalent


Part Number

2SD798

Description

SILICON NPN TRIPLE DIFFUSED TYPE TRANSISTOR

Manufacture

Toshiba

Total Page 3 Pages
PDF Download
Download 2SD798 Datasheet PDF


2SD798 Datasheet
:
SILICON NPN TRIPLE DIFFUSED TYPE
(DARLINGTON POWER)
.
2SD798
IGNITER APPLICATIONS.
HIGH VOLTAGE SWITCHING APPLICATIONS.
FEATURES
High DC Current Gain
: hFE=1500 (Min.)(V CE=2V, I C=2A)
INDUSTRIAL APPLICATIONS
Unit in mm
IQ.SMAX., ,03.6±a.2
MAXIMUM RATINGS
(Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
(Tc=25°C)
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
v CEO
v EBO
ic
IB
PC
T
J
Tstg
RATING UNIT
600 V
300 V
5V
6A
1A
30 W
150
-55^150
°C
°C
2.54
2.54
d
P' J-. ?c
X
^
.
L BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
EQUIVALENT CIRCUIT
=s2kn
!
COLLECTOR
EMITTER
TO 220 AI
SC 46
2 10A 1 A
Mounting Kit No. AC75
Weight : 1.9g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
SYMBOL
ICBO
lEBO
TEST CONDITION
Vcb=600v > I E=0
VEB=5V, I C=0
MIN. TYP. MAX. UNIT
- - 0.5 mA
- - 0.5 mA
Collector-Emitter Sustaining
Voltage
DC Current Gain
v CE0(SUS)
hFE(l)
hFE(2)
I C=0.5A, L=40mH
VCE=2V, I C=2A
V CE=2V, I C=4A
300 - -
1500 - -
200 - -
V
Collector- Emitter
Saturation Voltage
Base- Emitter
Saturation Voltage
Collector Output Capacitance
Switching
Time
Turn-on Time
Storage Time
Fall Time
v CE(sat)
I C=4A, Ib=0.04A
-
v BE(sat)
c ob
ton
tstg
I C=4A, Ib=0.04A
V CB=50V,I E=0,f=lMHz
^™20US
U\T
Jp=\
B1
input Tjfiir-^zJ-j
°-2*\<Zs !
T
"
la
-
-
-
-
B1=- =fc
I I B2 °-04A
*" *>
-
f
DUTY CYCLE^1#
VCC -100V
- 2.0
V
- 2.5
35 -
1-
8-
5-
V
pF
MS
TOSHIBA CORPORATION
723

2SD798 Datasheet
2SD798
STATIC CHARACTERISTICS
X^^V^" 8^ ft
2j;
i£
fc **
^ ^y
_1_
0.5
<;\
1-q J.2 mA
1
1
6 42
3 2 46
BASE CURRENT
COLLECTOR-
WI B (mA) ~ 0.4 EMITTER VOLTAGE
VcE
0.8
K Ho
£>"
1.2 M
16' <
g? 5
<c c5
COMMON
EMITTER
1'c == 2 5°C
ic V BE
6
COMMON EMITTER
5 _ VCE =2V
4
.o y
r// 4?/
£
3/
/
/
/
1/
//
'/
0.8 1.2 1.6
BASE- EMITTER VOLTAGE
2.0
vBe
2.4
(v)
30000
10000
5000
3000
1000
500
300.
100
0.02
h FE i c
r
"\y^^>
*
... &y.
COMMON EMITTER
V CE =2V
T *N^Tv-
-it
t
1 ^N
\
\
\-I
V
1
-"4
"3
^ £k£-r-:++i--:
...A*
N-.t
't
'""
i
31\ -Ti-
t"±"
VI \> \
-4
\
1.
0.05 0.1
0.3 0.5
1
3 5 io
COLLECTOR CURRENT ic A( )
in
5
D>
3
V CE( ea t ) - ic
i COMMON EMITTER
Cc/ I B = 100
-Tc == 55 °C
1
Ko
HEh
om
e>
<
0.5
0.3
o o,-H k3
O>
0.1
0.02
...~r
\
100
\
2.
0.05 0.1
0.3 0.5 1
COLLECTOR CURRENT
3 5 10
I c (A)
n v BE(sat) ~ Ic
0MM0N EMITTER
1 c/iB = ioo
... Tc = 55°C
. ;: -r-=
inn
0.02 0.05 0.1
0.3 0.5 1
COLLECTOR CURRENT
35
I C (A)
TOSHIBA CORPORATION
724-


Features Datasheet pdf : SILICON NPN TRIPLE DIFFUSED TYPE (DARL INGTON POWER) . 2SD798 IGNITER APPLIC ATIONS. HIGH VOLTAGE SWITCHING APPLICAT IONS. FEATURES • High DC Current Gain : hFE=1500 (Min.)(V CE=2V, I C=2A) IN DUSTRIAL APPLICATIONS Unit in mm IQ.SMA X., ,03.6±a.2 MAXIMUM RATINGS (Ta=25 °C) CHARACTERISTIC Collector-Base Vo ltage Collector-Emitter Voltage Emitte r-Base Voltage Collector Current Base Current Collector Power Dissipation (T c=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO v EBO ic IB PC T J Tstg RATING UNIT 600 V 300 V 5V 6A 1A 30 W 150 -55^150 ° C °C 2.54 2.54 d P' J-. ?c X ^ . L BASE 2. COLLECTOR (HEAT SINK) 3. EMIT TER EQUIVALENT CIRCUIT =s2kn ! COLLEC TOR EMITTER TO — 220 AI SC — 46 2 — 10A 1 A Mounting Kit No. AC75 Weigh t : 1.9g ELECTRICAL CHARACTERISTICS (T a=25°C) CHARACTERISTIC Collector Cut- off Current Emitter Cut-off Current SY MBOL ICBO lEBO TEST CONDITION Vcb=600v > I E=0 VEB=5V, I C=0 MIN. TYP. MAX. UNIT - - 0.5 mA - - 0.5 .
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