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2SB595

Part Number	2SB595
Manufacturer	Toshiba
Description	SILICON PNP TRANSISTOR
Published	Jul 17, 2018
Detailed Description	SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage : VCEO=...
Datasheet	2SB595 PDF File

Overview

SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS.
FEATURES • High Breakdown Voltage : VCEO=-100V • Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.
0V(Max.
) • Complementary to 2SD525.
• Recommended for 30W High-Fidelity Audio Frequency Amplifier Output Stage.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage VcBO VCEO VEBO Collector Current ic Emitter Current IE Base Current Collector Power Dissi- pation (T C =25°C) Junction Temperature Storage Temperature Ranee IB PC Tstg RATING -100 -100 -5 -5 -4 40 150 -55 ^150 UNIT V °C 10.
3 MAX.
Unit in mm 03.
6±O.
2 1.
BASE 2.
COLLECTOR...

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