DatasheetsPDF.com

2SA1217

Part Number	2SA1217
Manufacturer	Toshiba
Description	Silicon PNP Transistor
Published	Jul 17, 2018
Detailed Description	:1 SI LICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING FEATURES . Suitable fo...
Datasheet	2SA1217 PDF File

Overview

:1 SI LICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING FEATURES .
Suitable for output stage of 5 watts car radio and car stereo.
.
Good linearity of hFE.
Complementary to 2SC2877.
Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storaige Temperature Range SYMBOL VCBO VCEO v EBO ic IB T stg RATING -40 -40 -5 -3 -1 10 150 -55 -150 UNIT 1.
EMITTER 2.
COLLECTOR 3.
BASE T — 12 6 TOSHIBA -8F 1A The inside metal of dotted line is connected to collector lead.
Weight 0.
72 g CHARACTERISTIC...

Similar Datasheet

2SA1200 SILICON PNP TRIPLE DIFFUSED TRANSISTOR - Toshiba Semiconductor
2SA1200 PNP Transistors - Kexin
2SA1201 Silicon PNP Transistor - Toshiba Semiconductor
2SA1201 Plastic-Encapsulate Transistors - GME
2SA1201 Plastic-Encapsulate Transistors - WILLAS
2SA1201 SILICON PNP EPITAXIAL TRANSISTOR - UTC
2SA1201 TRANSISTOR - Jin Yu Semiconductor
2SA1201 PNP Silicon Transistor - SeCoS
2SA1201 Transistors - Kexin
2SA1201 Plastic-Encapsulate Transistors - TRANSYS

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)