Part Number |
2SA1322 |
Manufacturers |
Toshiba |
Logo |
|
Description |
SILICON PNP EPITAXIAL TYPE TRANSISTOR |
Datasheet |
2SA1322 Datasheet (PDF) |
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
HIGH VOLTAGE SWITCHING APPLICATIONS. COLOR TV CHROMA OUTPUT APPLICATIONS.
FEATURES
. High Voltage : VCEo=-250V
. Low C re
: 2.2pF(Max.)
. Complementary to 2SC3335
Unit in mm
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Peak
Base Current
Collector Power Dissipation
Ta=25°C Tc=25°C
Junction Temperature
Storage Temperature Range
SYMBOL VCBO VcEO VEBO ic ICP IB
PC
Tj
.
Tstg
RATING -250 -250 -5 -50 -100 -20 1.2 5.0 150
-55-150
UNIT V V V
mA
mA W
°C °C
2.3
»l
!
2.3
r
^t 1 ?,
XI
< 2
C\2'
i,
1. EMITTER 2. COLLECTOR (HEAT SINK) 3. BASE
TO-126
TOSHI BA
2-8P1A
Weight : 0.72g Mounting Kit No. AC46C
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current Collector-Emitter Breakdown Voltage
!eB0 v (BR) CEO
DC Current Gain
hFE
Collector-Emitter Saturation Voltage Base-Emi.