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Part Number 2SA1322
Manufacturers Toshiba
Logo Toshiba
Description SILICON PNP EPITAXIAL TYPE TRANSISTOR
Datasheet 2SA1322 Datasheet2SA1322 Datasheet (PDF)

  2SA1322   2SA1322
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH VOLTAGE SWITCHING APPLICATIONS. COLOR TV CHROMA OUTPUT APPLICATIONS. FEATURES . High Voltage : VCEo=-250V . Low C re : 2.2pF(Max.) . Complementary to 2SC3335 Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Peak Base Current Collector Power Dissipation Ta=25°C Tc=25°C Junction Temperature Storage Temperature Range SYMBOL VCBO VcEO VEBO ic ICP IB PC Tj . Tstg RATING -250 -250 -5 -50 -100 -20 1.2 5.0 150 -55-150 UNIT V V V mA mA W °C °C 2.3 »l ! 2.3 r ^t 1 ?, XI < 2 C\2' i, 1. EMITTER 2. COLLECTOR (HEAT SINK) 3. BASE TO-126 TOSHI BA 2-8P1A Weight : 0.72g Mounting Kit No. AC46C ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Emitter Cut-off Current Collector-Emitter Breakdown Voltage !eB0 v (BR) CEO DC Current Gain hFE Collector-Emitter Saturation Voltage Base-Emi.



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