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PDN6912S

Potens semiconductor
Part Number PDN6912S
Manufacturer Potens semiconductor
Description N-Channel MOSFETs
Published Aug 18, 2018
Detailed Description 60V N-Channel MOSFETs PDN6912S General Description These N-Channel enhancement mode power field effect transistors are...
Datasheet PDF File PDN6912S PDF File

PDN6912S
PDN6912S

Overview
60V N-Channel MOSFETs PDN6912S General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOT23-3S Pin Configuration D S G G D S BVDSS 60V RDSON 75m ID 3.
2A Features  60V,3.
2A, RDS(ON) =75mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  Motor Drive  Power Tools  LED Lighting Ab...


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