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HY3003P

HOOYI

N-Channel MOSFET


Description
HY3003P/B N-Channel Enhancement Mode MOSFET Features 30V/100A RDS(ON)= 3.5mΩ (typ.) @ VGS=10V 100% EAS Guaranteed Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Halogen - Free Device Available Pin Description DS G TO-220FB-3L DS G TO-263-2L Applications High Frequency Synchronous Buck C...



HOOYI

HY3003P

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