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PDEU2320Y

Potens semiconductor
Part Number PDEU2320Y
Manufacturer Potens semiconductor
Description N-Channel MOSFETs
Published Aug 20, 2018
Detailed Description 20V N-Channel MOSFETs PDEU2320Y General Description These N-Channel enhancement mode power field effect transistors ar...
Datasheet PDF File PDEU2320Y PDF File

PDEU2320Y
PDEU2320Y

Overview
20V N-Channel MOSFETs PDEU2320Y General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOT523 Pin Configuration D D S G G S BVDSS 20V RDSON 300m ID 800mA Features  20V,800mA, RDS(ON) =300mΩ@VGS = 4.
5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for 1.
5V Gate Drive Applications Applications  Notebook  Load Switc...


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