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PDR0906

Potens semiconductor
Part Number PDR0906
Manufacturer Potens semiconductor
Description N-Channel MOSFETs
Published Aug 21, 2018
Detailed Description 100V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using tre...
Datasheet PDF File PDR0906 PDF File

PDR0906
PDR0906

Overview
100V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
TO251 Pin Configuration D G GDS S PDR0906 BVDSS 100V RDSON 90m ID 15A Features  100V,15A, RDS(ON) =90mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  Networking  Load Switch  LED applications Abso...


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