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GT60N323
Silicon N-Channel IGBT
Description
GT60N323 TOSHIBA Insulated Gate Bipolar
Transistor
Silicon N Channel IGBT GT60N323 Voltage Resonance Inverter Switching Application Unit: mm diode included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.19 μs (typ.) (IC = 60 A) diode : trr = 0.35 μs (max.) (di/dt = −200 A/μs) Absolute Maximum Ratings (Ta = 25°C) Chara...
Toshiba
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