BLW81 | ASI
NPN SILICON RF POWER TRANSISTOR
BLW81
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLW81 is Designed for Class A,B or C UHF & VHF Communications
FEATURES:
• PG = 6 dB Typical at 470 MHz • Omnigold™ Metallization System
MAXIMUM RATINGS IC 2.5 A
VCB 36 V
PDISS
40 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC 4.4 °C/W
PACKAGE STYLE .280 4L STUD
A
45°
C
BE
E
B
D
E F
C
J I
G
H K
#8-32 UNC
.
- BLW81 | ASI
- NPN SILICON RF POWER TRANSISTOR
- BLW81
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLW81 is Designed for Class A,B or C UH.
- BLW81
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLW81 is Designed for Class A,B or C UHF & VHF Communications
FEATURES:
• PG = 6 dB Typical at 470 MHz • Omnigold™ Metallization System
MAXIMUM RATINGS IC 2.5 A
VCB 36 V
PDISS
40 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC 4.4 °C/W
PACKAGE STYLE .280 4L STUD
A
45°
C
BE
E
B
D
E F
C
J I
G
H K
#8-32 UNC
DIM MINIMUM
inches / mm
MAXIMUM
inches / mm
A 1.
- BLW81 | ELEFLOW TECHNOLOGIES
- UHF power transistor
- ELEFLOW TECHNOLOGIES www.eleflow.com
BLW81
UHF power transistor
BLW81
Description: N-P-N silicon.
- ELEFLOW TECHNOLOGIES www.eleflow.com
BLW81
UHF power transistor
BLW81
Description: N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the UHF and VHF range for nominal supply voltages up to 13.5 V. The resistance stabilization of the transistor provides protection against device damage at severe load mismatch conditions.
Features: The transistor is housed in a 1/4" capstan envelope with a ce.
- BLW81 | NXP
- UHF power transistor
- DISCRETE SEMICONDUCTORS
DATA SHEET
BLW81 UHF power transistor
Product specification
March 1993
Phi.
- DISCRETE SEMICONDUCTORS
DATA SHEET
BLW81 UHF power transistor
Product specification
March 1993
Philips Semiconductors
UHF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltages up to 13,5 V. The resistance stabilization of the transistor provides protection against device damage at severe load mismatch conditio.
