Power Transistor. C2665 Datasheet

C2665 Transistor. Datasheet pdf. Equivalent

Part C2665
Description Silicon NPN Power Transistor
Feature INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC2665 DESCRIPT.
Manufacture Inchange Semiconductor
Datasheet
Download C2665 Datasheet

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc C2665 Datasheet
Recommendation Recommendation Datasheet C2665 Datasheet





C2665
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2665
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
·Wide Area of Safe Operation
APPLICATIONS
·Designed for audio frequency power amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100 V
VCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
4A
55 W
150
Tstg Storage Temperature Range
-40~150
isc Websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark



C2665
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2665
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; RBE=
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC=3A; IB= 0.3A
ICBO Collector Cutoff Current
VCB= 100V; IE= 0
IEBO Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 4V
hFE-2
DC Current Gain
fT Current-GainBandwidth Product
IC= 4A; VCE= 4V
IC= 1A; VCE= 5V
MIN TYP. MAX UNIT
80 V
100 V
6V
1.5 V
100 μ A
100 μ A
40
20
10 MHz
isc Websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark





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