Power MOSFET. DP8205B Datasheet

DP8205B MOSFET. Datasheet pdf. Equivalent

DP8205B Datasheet
Recommendation DP8205B Datasheet
Part DP8205B
Description Dual N-Channel Enhancement Power MOSFET
Feature DP8205B; DP8205B www.depuw.com General Description Dual N-Channel Enhancement Power MOSFET Product Summary.
Manufacture DEVELOPER MICROELECTRONICS
Datasheet
Download DP8205B Datasheet




DEVELOPER MICROELECTRONICS DP8205B
DP8205B
www.depuw.com
General Description
Dual N-Channel Enhancement Power MOSFET
Product Summary
Rev1.0
DP8205B uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a Battery protection or in
other Switching application.
VDS
ID (at VGS=4.5V)
RDS(ON) (at VGS = 4.5V)
RDS(ON) (at VGS = 2.5V)
20 V
6.5A
< 22m
< 27mΩ
SOT23-6
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TJ=25
Pulsedb
Drain-Sourse Diode Forward Currenta
Maximum Power Dissipationa
Operating Junction and Storage
Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ,TSTG
Limit
20
±12
6.5
25
6.5
1.25
-55 To 150
Thermal Characteristic
Parameter
Thermal Resistance,Junction-to-Ambient a
Symbol
RθJA
Limit
100
DEVELOPER MICROELECTRONICS
Unit
V
V
A
A
A
W
Unit
/W



DEVELOPER MICROELECTRONICS DP8205B
Dual N-Channel Enhancement Power MOSFET
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Drain-Source On-State Resistance RDS(ON)
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Condition
VGS=0V ID=250μA
VDS=20V,VGS=0V
VGS=±12V,VDS=0V
VDS=VGS,ID=250μA
VGS=4.5V, ID=4,5A
VGS=2.5V, ID=3.5A
VDS=5V,ID=4.5A
VDS=10V,
VGS=0V,
F=1.0MHz
VDD=10V,
ID=1A
VGS=4.5V,
RGEN=6,
RL=10
VDS=10V,
ID=6A,
VGS=4.5V
VGS=0V,IS=1.7A
Notes:
a. Surface Mounted on FR4 Board ,T<10 sec ;
b. Pulse Test: Pulse Width 300μ s, Duty Cycle 2%.
c. Guaranteed by Design, not subject to production testing.
DP8205B
Rev1.0
Min Typc Max Unit
20 -
-V
- - 1 μA
- - ±100 nA
0.5 0.7 1.2 V
- 15 22 mΩ
- 19 27 mΩ
- 10 - S
- 900 -
- 220 -
- 100 -
pF
pF
pF
- 10 20 nS
- 11 25 nS
- 35 70 nS
- 30 60 nS
- 12 15 nC
- 2.3 - nC
- 1 - nC
- 0.75 1.2 V
DEVELOPER MICROELECTRONICS



DEVELOPER MICROELECTRONICS DP8205B
Dual N-Channel Enhancement Power MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
DP8205B
Rev1.0
DEVELOPER MICROELECTRONICS







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