DatasheetsPDF.com

2N967

PNP germanium epitaxial mesa transistors

Description

2N960 SERIES (continued) ELECTRICAL CHARACTERISTICS (continued) Characteristic Output Capacitance (VCS = 10 Vde, ~ = 0, f = 1 MHz) Symbol Min Typ Max Unit Cob pF - 2.2 4.0 Emitter Transition Capacitance (VES = 1 Vde) Turn-On Time All Types (IC = 10 mAde, lSI =5 mAde, VSE(off) = 1. 25 Vde) (IC = 100 mAde, lSI = 5 mAde, VSE(off) = 1.25 Vde) Turn-Off T...

Motorola

Download 2N967 Datasheet

Similar Datasheet

2N90 N-Channel MOSFET Transistor - Inchange Semiconductor
2N90 N-CHANNEL POWER MOSFET - Unisonic Technologies
2N90-FC N-CHANNEL MOSFET - UTC
2N909 SI NPN LO-PWR BJT - New Jersey Semi-Conductor
2N910 NPN silicon annular transistors - Motorola
2N911 NPN silicon annular transistors - Motorola
2N914 NPN Transistor - Telefunken
2N914 NPN Transistor - ETC
2N914 SWITCHING TRANSISTOR - Motorola
2N915 Bipolar NPN Device - Semelab

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)