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2N998

Part Number	2N998
Manufacturer	Motorola
Description	Darlington amplifier containing two NPN silicon annular transistors
Published	Nov 8, 2018
Detailed Description	2N998 (SILICON) Darlington amplifier containing two NPN silicon annular transistors is designed for applications requir...
Datasheet	2N998 PDF File

Overview

2N998 (SILICON) Darlington amplifier containing two NPN silicon annular transistors is designed for applications requiring very high-gain, low-noise, and high-input impedance.
CASE 20(8) (TO·72) B, MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating Junction Temperature Storage Temperature Range Symbol VCEO VCB VEB IC Po Po TJ Tstg 2N998 60 100 15 500 0.
5 2.
86 1.
8 10.
3 +200 -65 to +200 Unit Vdc Vdc Vdc mAdc watt mW/oC Watts mW/oC °c °c 2-146 2N998 (continued) ELECTRICAL CHARACTERISTICS CT.
= 2O'C .
.
Ie.
.
ot...

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