HM4805
Dual P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM4805 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
GENERAL FEATURES
● VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-10V
● High Power and current handing capability ● Lead free produc...
