HM4843
Dual P-Channel Enhancement Mode Power MOSFET
Description
The HM4843 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications.
General Features
● VDS = -40V,ID = -5.0A RDS(ON) < 126mΩ @ VGS=-4.5V RDS(ON) < 85mΩ @ VGS=-10V
D1 G1
G2
D2
S1 S2
Schematic diagram
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