N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM4302B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
HM4302B
GENERAL FEATURES
●VDS =30V,ID =25A RDS(ON) < 5.5mΩ @ VGS=10V RDS(ON) < 7.0mΩ @ VGS=5V
● High density cell design for ultra low Rdson ● Fully c...
