N-Channel Enhancement Mode Power MOSFET
Description
The PED30H10G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =30V,ID =100A RDS(ON) <5.5mΩ @ VGS=10V
(Typ:4mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalan...
