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PE9926

N-Channel Enhancement Mode Power MOSFET

Description

PE9926 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =20V,ID =6A RDS(ON) < 28mΩ @ VGS=4.5V RDS(ON) < 38mΩ @ VGS=2.5V Schematic diagram ● High density cell design for ultra ...

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