SSC8121GN1
P-Channel Enhancement Mode MOSFET
⚫ Features
VDS VGS RDSon TYP
ID
150mR@-4V5
-20V ±8V 190mR@-2V5 -1.0A
255mR@-1V8
⚫ General Description
This device is produced with high cell density DMOS trench
technology, which is especially used to minimize on-state
resistance. This device particularly suits low voltage
applications such as portable ...
