Mode MOSFET. SSC8121GN1 Datasheet

SSC8121GN1 MOSFET. Datasheet pdf. Equivalent

SSC8121GN1 Datasheet
Recommendation SSC8121GN1 Datasheet
Part SSC8121GN1
Description P-Channel Enhancement Mode MOSFET
Feature SSC8121GN1; SSC8121GN1 P-Channel Enhancement Mode MOSFET ⚫ Features VDS VGS RDSon TYP ID 150mR@-4V5 -20V ±.
Manufacture AFSEMI
Datasheet
Download SSC8121GN1 Datasheet




AFSEMI SSC8121GN1
SSC8121GN1
P-Channel Enhancement Mode MOSFET
Features
VDS VGS RDSon TYP
ID
150mR@-4V5
-20V ±8V 190mR@-2V5 -1.0A
255mR@-1V8
General Description
This device is produced with high cell density DMOS trench
technology, which is especially used to minimize on-state
resistance. This device particularly suits low voltage
applications such as portable equipment, power management
and other battery powered circuits, and low in-line power
dissipation are needed in a very small outline surface mount
package. Excellent thermal and electrical capabilities.
Package Information
Applications
Load Switch
Portable Devices
DCDC conversion
Pin Configuration
Top View
Bottom View
G
D
S
Ordering Information
Device
SSC8121GN1
DFN1006
Package
DFN1006
Marking
K
SSC-1V0
http://www.afsemi.com
Qty Per Reel
10000
1/5
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AFSEMI SSC8121GN1
SSC8121GN1
Absolute Maximum Ratings @TA=25unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a VGS@4.5V TA = 25°C
Continuous Drain Current a VGS@4.5V TA = 70°C
Drain Current (Pulse)b
Power Dissipation a TC = 25°C
Power Dissipation a TC = 70°C
Storage and Junction Temperature Range
Symbol
VDSS
VGSS
ID
IDM
PD
TJ//TSTG
Ratings
-20
±8
-1.0
-0.7
-5
0.9
0.5
-55~150
Unit
V
V
A
A
A
W
W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient a
Maximum Junction-to- Ambient C
t10S
Steady-State
t10S
Steady-State
Symbol
RJA
RJA
Typ
80
106
197
275
Max
101
138
242
332
Units
°C/W
°C/W
°C/W
°C/W
Electrical Characteristics @TA=25unless otherwise noted
Parameter
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate-Source Leakage Current
Gate Threshold Voltage
Drain-Source On-state Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Feedback Capacitance
Symbol
Test Conditions
OFF CHARACTERISTICS
V(BR)DSS
VGS = 0V, ID=-250uA
IDSS VDS = -20 V , VGS = 0V
IGSS VGS =±8 V , VDS = 0V
ON CHARACTERISTICS
VGS(th )
ID = -250 uA , VDS = VGS
VGS = -4.5V ,ID = -0.45A
RDS(on)
VGS = -2.5V , ID = -0.35A
VGS = -1.8V , ID = -0.25A
gFS VDS = -5V, ID = -1.4A
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
VDS = -6V , VGS = 0V
f = 1 MHz
SWITCHING CHARACTERISTICS
SSC-1V0
http://www.afsemi.com
Min Typ Max Unit
-20 -- -- V
-- -- -1 uA
--
--
±100
nA
-0.45
--
--
--
-0.75
150
190
255
6.5
-1.5
350
450
700
--
V
mR
mR
mR
S
-- 376 --
-- 187 --
-- 78 --
pF
pF
pF
2/5
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AFSEMI SSC8121GN1
SSC8121GN1
Turn-on Delay Time
Turn-off Delay Time
td ( on )
td( off )
VDD = -6V , RL = 6R,ID = -1.0A,
VGEN = -4.5V, RG = 6R
--
--
13 25 ns
42 70 ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
Is = -1 A, VGS = 0V
-0.5 -- -1.2 V
Notes:
a: mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
b: Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
c: mounted on FR-4 minimum pad board, in a still air environment with T A =25°C.
SSC-1V0
http://www.afsemi.com
3/5
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