Mode MOSFET. SSC8129GS1 Datasheet

SSC8129GS1 MOSFET. Datasheet pdf. Equivalent

SSC8129GS1 Datasheet
Recommendation SSC8129GS1 Datasheet
Part SSC8129GS1
Description P-Channel Enhancement Mode MOSFET
Feature SSC8129GS1; SSC8129GS1 P-Channel Enhancement Mode MOSFET  Features VDS -20V VGS ±12V RDSon TYP 10mR@-4V5V .
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AFSEMI SSC8129GS1
SSC8129GS1
P-Channel Enhancement Mode MOSFET
Features
VDS
-20V
VGS
±12V
RDSon TYP
10mR@-4V5V
13mR@-2V5
ID
-18A
Applications
Load Switch
DCDC conversion
NB battery
Pin configuration
General Description
Top View
This device is produced with high cell density, DMOS
trench technology, which is especially used to minimize
on-state resistance. This device is particularly suited for
low voltage power management requiring a wild range
of given voltage ratings(4.5V~25V) such as load switch
and battery protection.
Package Information
⑥⑤
② ③④
SOP8
Unit:mm
SSC-1V0
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AFSEMI SSC8129GS1
SSC8129GS1
Absolute Maximum Ratings @TA = 25unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Continuous TA=25°C
Pulsed (Note 2)
Total Power Dissipation (Note 1)
Operating and Storage Junction Temperature Range
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Limit
-20
±12
-18
-90
3
-55 to +150
Unit
V
V
A
A
W
°C
Electrical Characteristics @TA = 25unless otherwise noted
Parameter
Symbol
Test Conditions
Min Typ Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = -250uA
-20 --
Zero Gate Voltage Drain Current
IDSS
VDS = -16 V, VGS = 0 V
-- --
Gate–Body Leakage Current
IGSS VGS = ±12 V, VDS = 0 V -- --
ON CHARACTERISTICS
Gate Threshold Voltage
Drain–Source On–State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID =-250uA
VGS = -4.5V, ID = -10A
VGS = -2.5V, ID = -7A
-0.5 --
-- 10
-- 13
Forward Transconductance
GFS VDS = -5 V, ID = -10 A -- 18
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = -15V, VGS = 0V,
f = 1MHz
-- 1020
-- 110
-- 90
SWITCHING CHARACTERISTICS
Turn–On Delay Time
Turn–Off Delay Tim
TD(ON)
TD(OFF)
VGS=-10VVDS=-15V, -- 10.5
RL=1.5R, RGEN=3R
-- 51
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VSD VGS = 0 V, IS = -2.3 A -- -0.7
--
-1
±100
-1
13
16
--
--
--
--
--
--
-1.3
V
uA
nA
V
mR
S
pF
nS
V
Note: 1. The value of PD is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment
with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is
based on the DC thermal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
SSC-1V0
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AFSEMI SSC8129GS1
Typical Performance Characteristics
SSC8129GS1
SSC-1V0
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