SSC8039GQ4
P-Channel Enhancement Mode MOSFET
Features
VDS -30V
VGS ±20V
RDSon TYP 15mR@-10V 20mR@-4V5
ID -10A
Applications
Load Switch
DCDC conversion NB battery
Pin configuration
General Description
Bottom View
This device is produced with high cell density, DMOS trench
technology, which is especially used to minimize on-state resis...
