Mode MOSFET. SSC8033GS6 Datasheet

SSC8033GS6 MOSFET. Datasheet pdf. Equivalent

SSC8033GS6 Datasheet
Recommendation SSC8033GS6 Datasheet
Part SSC8033GS6
Description P-Channel Enhancement Mode MOSFET
Feature SSC8033GS6; SSC8033GS6 P-Channel Enhancement Mode MOSFET  Features  Applications  TFT panel power switch; .
Manufacture AFSEMI
Datasheet
Download SSC8033GS6 Datasheet




AFSEMI SSC8033GS6
SSC8033GS6
P-Channel Enhancement Mode MOSFET
Features
Applications
TFT panel power switch;
VDS
-30V
VGS
±20V
RDSon TYP
55mR@-10V
68mR@-4V5
ID
-3A
High Side DC/DC Converter
High Side Driver for Brushless DC Motor
Portable DVD, DPF
Pin configuration
General Description
Top View
D
This P-Channel enhancement mode power FETs are
3
produced with high cell density, DMOS trench
technology, which is especially used to minimize
on-state resistance. This device is particularly suited for
low voltage application such as portable equipment,
power management and other battery powered circuits,
12
and low in-line power loss are needed in a very small
GS
outline surface mount package.
Package Information
SSC-1V1
http://www.afsemi.com
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AFSEMI SSC8033GS6
SSC8033GS6
Absolute Maximum Ratings @TA = 25unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
Continuous Drain Current a VGS@4.5V TA = 25°C
Continuous Drain Current a VGS@4.5V TA = 70°C
Plused Drain Current b
Power Dissipation a TC = 25°C
Power Dissipation a TC = 70°C
Storage and Junction Temperature
VGSS
ID
IDM
PD
TJ TSTG
Ratings
-30
±20
-3
-2
-10
0.55
0.35
-55~150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
t10S
Steady-State
Steady-State
Symbol
RJA
RJC
Typ
--
--
--
Max
196
231
119
Unit
V
V
A
A
A
W
W
Units
°C/W
°C/W
°C/W
Order information
Device
Package
Marking
Shipping
SSC8033GS6
SOT23
3000/Tape&Reel
SSC-1V1
http://www.afsemi.com
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AFSEMI SSC8033GS6
SSC8033GS6
Electrical Characteristics @TA = 25°C unless otherwise noted
Parameter
Symbol
Test Conditions
Min Typ
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V(BR)DSS
VGS = 0 V, ID = -250 µA
IDSS VDS = -30 V, VGS = 0 V
IGSSF
VGS = +20 V, VDS = 0 V
IGSSR
VGS = -20 V, VDS = 0 V
ON CHARACTERISTICS (2)
-30 --
-- --
-- --
-- --
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
VGS (TH)
VDS = VGS, ID = -250 µA
RDS(ON)
VGS = -4.5 V, ID = -3 A
VGS = -10 V, ID = -4.1 A
GFS VDS = -5 V, ID = -2.8 A
DYNAMIC CHARACTERISTICS (3)
-1 -1.6
-- 68
-- 55
46
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = -6 V, VGS = 0 V,
F = 1.0 MHz
SWITCHING CHARACTERISTICS (3)
-- 680
-- 72
-- 58
Turn-On Delay Time
TD(ON)
VDD = -6 V, RL = 6R,ID = -1.0 A,
--
--
Turn-On Rise Time
TR
VGEN = -4.5 V,RG = 6R
--- --
Turn-Off Delay Time
Turn-Off Fall Time
TD(OFF)
TF
VDD= -6 V, RL = 6R,ID = -1.0 A,
VGEN = -4.5 V,RG = 6R
--
--
--
--
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Current(4)
IS
-- -- --
Drain-Source Diode Forward Voltage(2)
VSD
VGS = 0 V, IS = -0.75 A
-0.6 -0.8
Notes:
a: Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
b: Pulse width<380µs, Duty Cycle<2%
c: Maximum junction temperature TJ=150°C.
Max
--
-1
100
-100
-2.0
110
90
--
--
--
--
20
10
65
45
-1.35
-1.3
Unit
V
µA
nA
nA
V
mR
S
pF
pF
pF
ns
ns
A
V
SSC-1V1
http://www.afsemi.com
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