Mode MOSFET. SSC8033GS1 Datasheet

SSC8033GS1 MOSFET. Datasheet pdf. Equivalent

SSC8033GS1 Datasheet
Recommendation SSC8033GS1 Datasheet
Part SSC8033GS1
Description P-Channel Enhancement Mode MOSFET
Feature SSC8033GS1; SSC8033GS1 P-Channel Enhancement Mode MOSFET  Features VDS -30V VGS ±20V RDSon TYP 51mR@-10V 6.
Manufacture AFSEMI
Datasheet
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AFSEMI SSC8033GS1
SSC8033GS1
P-Channel Enhancement Mode MOSFET
Features
VDS
-30V
VGS
±20V
RDSon TYP
51mR@-10V
68mR@-4V5
ID
-5.4A
Applications
Load Switch
DCDC conversion
TFT panel power switch
Pin configuration
General Description
Top View
This device is produced with high cell density, DMOS
trench technology, which is especially used to minimize
on-state resistance. This device is particularly suited for
low voltage application such as portable equipment,
power management and other battery powered circuits,
and low in-line power loss are needed in a very small
outline surface mount package.
Package Information
⑥⑤
② ③④
SOP8
Unit:mm
SSC-1V0
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AFSEMI SSC8033GS1
SSC8033GS1
Absolute Maximum Ratings @TA = 25unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Continuous TA=25°C
Pulsed (Note 2)
Total Power Dissipation (Note 1)
Operating and Storage Junction Temperature Range
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Limit
-30
±20
-5.4
-20
1.5
-55 to +150
Unit
V
V
A
A
W
°C
Electrical Characteristics @TA = 25unless otherwise noted
Parameter
Symbol
Test Conditions
Min Typ Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = -250μA
-30 --
Zero Gate Voltage Drain Current
IDSS VDS = -24 V, VGS = 0 V
-- --
Gate–Body Leakage Current
IGSS VGS = ± 20 V, VDS = 0 V
-- --
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID =-250μA
-1 -1.46
Drain–Source On–State Resistance
RDS(ON)
VGS = -10 V, ID = -4.6 A
VGS = -4.5 V, ID = -2 A
-- 51
-- 68
Forward Transconductance
GFS VDS = -5 V, ID = -6 A
-- 12
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = -15 V, VGS = 0 V,
f = 1.0 MHz
-- 550
-- 60
-- 50
SWITCHING CHARACTERISTICS
Turn–On Delay Time
Turn–Off Delay Tim
TD(ON)
TD(OFF)
VDS = -15 V, RL = 2.5R,
VGS = -10V, RGEN=3R
-- 8.6
-- 28.2
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VSD VGS = 0 V, IS = -1 A
-- -0.81
--
-1
±100
-3
60
96
--
--
--
--
--
--
-1.6
V
μA
nA
V
mR
S
pF
nS
V
Note: 1. The value of PD is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment
with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is
based on the DC thermal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
SSC-1V0
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AFSEMI SSC8033GS1
SSC8033GS1
SSC-1V0
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