Mode MOSFET. SSC8062GS1 Datasheet

SSC8062GS1 MOSFET. Datasheet pdf. Equivalent

SSC8062GS1 Datasheet
Recommendation SSC8062GS1 Datasheet
Part SSC8062GS1
Description N-Channel Enhancement Mode MOSFET
Feature SSC8062GS1; SSC8062GS1 N-Channel Enhancement Mode Power MOSFET  Features  Applications VDS 60V VGS ±20V .
Manufacture AFSEMI
Datasheet
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AFSEMI SSC8062GS1
SSC8062GS1
N-Channel Enhancement Mode Power MOSFET
Features
Applications
VDS
60V
VGS
±20V
RDSon TYP
30mR@10V
35mR@4V5
ID
6A
Load Switcing;
PWM application
General Description
Pin configuration
SSC8062GS1 uses advanced trench technology to
provide excellent RDS(ON). It is particularly suitable for
DCDC conversion and motor driver.
Package Information
⑧ ⑦ ⑥⑤
② ③④
SOP8
Unit:mm
SSC-V1.0
http://www.afsemi.com
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AFSEMI SSC8062GS1
SSC8062GS1
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
Drain Current
Continuous
Pulse
Total Power Dissipation (note1)
Operating and Storage Junction Temperature Range
Note1: Surface Mounted on 1in pad area.
VGSS
ID
IDM
PD
TJ, TSTG
Electrical Characteristics @ TA = 25°C unless otherwise specified
Ratings
60
±20
6
45
2
-55 to +150
Parameter(note2)
Symbol
Test Conditions
Min Typ
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage
V(BR)DSS
VGS = 0 V, ID = 250uA
IDSS VDS = 60 V, VGS = 0 V
IGSS VGS = ± 20 V, VDS = 0 V
ON CHARACTERISTICS
60
--
--
--
--
--
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250uA 1 1.4
Static Drain–Source On–Resistance
RDS(ON)
VGS = 10 V, ID = 5.5 A -- 30
VGS = 4.5 V, ID = 4.5 A -- 35
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 10 V, VGS = 0 V,
F = 1MHz
SWITCHING CHARACTERISTICS
-- 1180
-- 170
-- 100
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Tim
Turn–Off Fall Time
TD(ON)
TR
TD(OFF)
TF
VGS=10V, VDS=30V,
RL=5.4R,
RGEN=3R, ID=5.5A
-- --
-- --
-- --
-- --
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VSD VGS = 0 V, IS = 2 A
Note2: Short duration test pulse used to minimize self-heating effect.
0.5 0.77
Unit
V
V
A
W
°C
Max Unit
--
1
±100
V
μA
nA
3V
41
mR
52
--
-- pF
--
25
70
nS
300
150
1.0 V
SSC-V1.0
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AFSEMI SSC8062GS1
Typical Performance Characteristics
20
VGS=4.5V,5V,6V,10V
16
V =4V
GS
12
8
VGS=3.5V
VGS= 3V
4 VGS= 2.5V
V = 2V
GS
0
012345
VDS, Drain-Source Voltage (V)
Figure 1. Output Characteristics
60
50
40
30
0 5 10 15 20
ID, Drain Current (A)
Figure 3. On Resistance
60
VGS= 4.5V, ID= 3A
40
VGS= 10V, ID= 4.5A
20
-40 0
40 80 120 160
Tj Junction Temperature (oC)
Figure 5 . On resistance vs. Temperature
SSC8062GS1
15
12
VDS= 5V
9
6
3
0
2.0 2.5 3.0 3.5 4.0
VGS, Gate-to-source Voltage(V)
Figure 2. Transfer Characteristics
150
120 ID=4.5A
90
60
30
2
2.0
4 6 8 10
VGS, Gate-to-source Voltage(V)
Figure 4. On Resistance VS VGS
1.8
1.6
1.4
VGS=VDS, ID= 250 uA
1.2
1.0
-40 0
40 80 120 160
Tj, Junction Temperature (oC)
Figure 6. Gate Threshold Vs. Temperature
SSC-V1.0
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