(Datasheet) I4N60 data sheet PDF





I4N60 Datasheet, 4A 600V N-channel Enhancement Mode Power MOSFET

I4N60   I4N60  

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4N60/F4N60/I4N60/E4N60/B4N60/D4N60 4A 60 0V N-channel Enhancement Mode Power MOS FET 1 Description These N-channel Enha nced VDMOSFETs, is obtained by the self -aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS sta ndard. VDSS = 600V RDS(on) (TYP)= 2. 1Ω ID = 4A 2 Features ● Fast

I4N60 Datasheet, 4A 600V N-channel Enhancement Mode Power MOSFET

I4N60   I4N60  
Switching ● ESD Improved Capability Low ON Resistance(Rdson≤2.5Ω) ● Low Gate Charge(Typical Data:14.5nC) Low Reverse Transfer Capacitances(Typ ical:4pF) ● 100% Single Pulse Avalanc he Energy Test ● 100% ΔVDS Test TO- 220C TO-220F TO-262 3 Applications ● used in various power switching circui t for system miniaturization and higher efficiency. ● Power switch circuit of electro








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