Dual P-Channel Enhancement Mode Field Effect Transistor
Description
AO5803E Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO5803E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SC89-6L footprint. It can be used as load switching, and wide variety of FET applications. AO5803E and AO5803EL are elec...
