BAV100 Diodes Datasheet

BAV100 Datasheet PDF, Equivalent


Part Number

BAV100

Description

Small Signal Diodes

Manufacture

Kingtronics

Total Page 4 Pages
Datasheet
Download BAV100 Datasheet


BAV100
BAV100 THRU BAV103
FEATURE
Silicon Epitaxial Planar Diodes
For general purpose
These diodes are also available in other
case styles including: the DO-35 case with
the type designations BAV19 to BAV21, the SOD-123
case with the type designations BAV19W to BAV21W,
and the SOT-23 case with the type designation
BAS19 - BAS21.
Small Signal Diodes
MECHANICAL DATA
Case: DO-213AA Glass Case
Weight: approx. 0.05 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Parameter
SYMBOLS
Reverse Voltage
BAV100
BAV101
BAV102
BAV103
Forward DC Current at Tamb = 25 °C
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at Tamb = 25 °C and f ³ 50 Hz
Repetitive Peak Forward Current
at f ³ 50 Hz, Q = 180 °C, Tamb = 25 °C
Surge Forward Current at t < 1 s, Tj = 25 °C
Power Dissipation at Tamb = 25 °C
Junction Temperature
Storage Temperature Range
1) Valid provided that electrodes are kept at ambient temperature.
VR
VR
VR
VR
IF
I0
IFRM
IFCM
Ptot
Tj
Ts
Value
60
120
200
250
2501)
2001)
6251)
1
4001)
175
–65 to +175
UNITS
V
V
V
V
mA
mA
mA
A
mW
Website: www.kingtronics.com Email: info@kingtronics.com Tel: (852) 8106 7033 Fax: (852) 8106 7099
1

BAV100
BAV100 THRU BAV103
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
SYMBOLS
Forward voltage at IF = 100 mA
VF
Leakage Current
at VR = 50 V
at VR = 50 V, Tj = 100 °C
at VR = 100 V
at VR = 100 V, Tj = 100 °C
at VR = 150 V
at VR = 150 V, Tj = 100 °C
at VR = 200 V
at VR = 200 V, Tj = 100 °C
BAV100
BAV100
BAV101
BAV101
BAV102
BAV102
BAV103
BAV103
IR
IR
IR
IR
IR
IR
IR
IR
Dynamic Forward Resistance
at IF = 10 mA
rf
Capacitance
at VR = 0, f = 1 MHz
Ctot
Reverse Recovery Time
from IF = 30 mA through IR = 30 mA to
IR = 3 mA; RL = 100 W
trr
Thermal Resistance
Junction to Ambient Air
RthJA
1) Valid provided that electrodes are kept at ambient temperature.
Min
Typ.
Max
– –1
- - 100
- - 15
- - 100
- - 15
- - 100
- - 15
- - 100
- - 15
- 5-
1.5 -
- 50
- 0.3751)
UNIT
V
nA
mA
nA
mA
nA
mA
nA
mA
W
pF
ns
K/mW
Website: www.kingtronics.com Email: info@kingtronics.com Tel: (852) 8106 7033 Fax: (852) 8106 7099
2


Features BAV100 THRU BAV103 FEATURE Silicon Epit axial Planar Diodes For general purpose These diodes are also available in oth er case styles including: the DO-35 cas e with the type designations BAV19 to B AV21, the SOD-123 case with the type de signations BAV19W to BAV21W, and the SO T-23 case with the type designation BAS 19 - BAS21. Small Signal Diodes MECHA NICAL DATA Case: DO-213AA Glass Case We ight: approx. 0.05 g MAXIMUM RATINGS A ND ELECTRICAL CHARACTERISTICS Ratings a t 25 °C ambient temperature unless oth erwise specified Parameter SYMBOLS R everse Voltage BAV100 BAV101 BAV102 BAV103 Forward DC Current at Tamb = 2 5 °C Rectified Current (Average) Hal f Wave Rectification with Resist. Load at Tamb = 25 °C and f ³ 50 Hz Repet itive Peak Forward Current at f ³ 50 Hz, Q = 180 °C, Tamb = 25 °C Surge F orward Current at t < 1 s, Tj = 25 °C Power Dissipation at Tamb = 25 °C Ju nction Temperature Storage Temperature Range 1) Valid provided that electrodes are kept at ambient t.
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