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YJB150N06BQ
N-Channel Enhancement Mode Field Effect Transistor
Description
YJB150N06BQ RoHS COMPLIANT N-Channel Enhancement Mode Field Effect
Transistor
Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● 100% UIS Tested ● 100% ▽VDS Tested 60V 150A ＜5.5mohm General Description ● Trench Power MV MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● DC-DC Converters...
Yangzhou Yangjie
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YJB150N06BQ
N-Channel Enhancement Mode Field Effect Transistor
- Yangzhou Yangjie
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