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YJD80G06A

N-Channel Enhancement Mode Field Effect Transistor

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YJD80G06A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) ● 100% UIS Tested ● 100% ▽VDS Tested 60V 80A ＜8 mohm ＜11 mohm General Description ● Split Gate Trench MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) ...

Yangzhou Yangjie

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YJD80G06A N-Channel Enhancement Mode Field Effect Transistor - Yangzhou Yangjie

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