BAV100W Diodes Datasheet

BAV100W Datasheet, PDF, Equivalent


Part Number

BAV100W

Description

Small Signal Diodes

Manufacture

Jingdao

Total Page 3 Pages
Datasheet
Download BAV100W Datasheet


BAV100W
山东晶导微电子股份有限公司
Jingdao Microelectronics co.LTD
BAV100W THRU BAV103W
FEATURES
For surface mounted applications
Glass Passivated Chip Junction
Fast reverse recovery time
Ideal for automated placement
Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
Case: SOD-123
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight:16mg/0.00056oz
PINNING
PIN DESCRIPTION
1 Cathode
2 Anode
2
1
Simplified outline SOD-123 and symbol
Absolute Maximum Ratings at 25 °C
Parameter
Symbols BAV100W BAV101W BAV102W BAV103W Units
Maximum Repetitive Peak Reverse Voltage
VRRM
60
120 200 250 V
Maximum RMS voltage
VRMS
50
100 150 200 V
Continuous Forward Current
IF 250 mA
Repetitive Peak Forward Current
Non-reptitive Peak Forward Surge Current
at 1s
at 1ms
at 1 us
Total Power Dissipation
Typical Thermal Resistance 1
Operating and Storage Temperature Range
1P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
Characteristics at Ta = 25 °C
Parameter
IFRM
IFSM
Ptot
RθJA
Tj, Tstg
625
1
3
9
500
500
-55 ~ +150
mA
A
mW
°C/W
°C
Symbols BAV100W BAV101W BAV102W BAV103W Units
Reverse BreakdownVoltage at IR=100μA
Maximum Forward Voltage at 100 m A
at 200 m A
Maximum DC Reverse Current Ta = 25 °C
at Rated DC Blocking Voltage Ta =100 °C
Typical Junction Capacitance
at VR=4V, f=1MHz
1
Maximum Reverse Recovery Time
1Measured with IF = 0.5 A, IR = 1 A, Irr = 0.25 A
V(BR)R
VF
IR
Cj
trr
60
120 200
1.00
1.25
0.1
15
5
50
250 V
V
μA
pF
ns
2016.11
SOD123-K-BAV100W~BAV103W-250mA250V
Page 1 of 3

BAV100W
山东晶导微电子股份有限公司
Jingdao Microelectronics co.LTD
BAV100W THRU BAV103W
Fig.1 Forward Current Derating Curve
600
500
400
300
200
100
0.0
25 50 75 100 125 150 175
Ambient Temperature (°C)
Fig.3 Typical Instaneous Forward
Characteristics
1.0
0.1
0.01
0.0
TJ=25°C
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instaneous Forward Voltage (V)
Fig.2 Typical Reverse Characteristics
100
TJ=150°C
10
1
0.1
TJ=25°C
0.01
00 20 40
60 80 100 120
percent of Rated Peak Reverse Voltage (%)
Fig.4 Typical Junction Capacitance
100 TJ=25°C
10
1
0.1 1.0
10
Reverse Voltage (V)
100
2016.11
www.sdjingdao.com
Page 2 of 3


Features Jingdao Microelectronics co.LTD BAV100 W THRU BAV103W FEATURES ▪ For surfac e mounted applications ▪ Glass Passiv ated Chip Junction ▪ Fast reverse rec overy time ▪ Ideal for automated plac ement ▪ Lead free in comply with EU R oHS 2011/65/EU directives MECHANICAL DA TA ▪Case: SOD-123 ▪Terminals: Solde rable per MIL-STD-750, Method 2026 ▪ Approx. Weight:16mg/0.00056oz PINNING PIN DESCRIPTION 1 Cathode 2 Anode 2 1 S implified outline SOD-123 and symbol A bsolute Maximum Ratings at 25 °C Para meter Symbols BAV100W BAV101W BAV102W BAV103W Units Maximum Repetitive Peak Reverse Voltage VRRM 60 120 200 250 V Maximum RMS voltage VRMS 50 100 1 50 200 V Continuous Forward Current I F 250 mA Repetitive Peak Forward Curre nt Non-reptitive Peak Forward Surge Cu rrent at 1s at 1ms at 1 us Total Powe r Dissipation Typical Thermal Resistan ce (1) Operating and Storage Tempe rature Range (1)P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) .
Keywords BAV100W, datasheet, pdf, Jingdao, Small, Signal, Diodes, AV100W, V100W, 100W, BAV100, BAV10, BAV1, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)