BAV100WL Diodes Datasheet

BAV100WL Datasheet PDF, Equivalent


Part Number

BAV100WL

Description

Small Signal Diodes

Manufacture

Jingdao

Total Page 3 Pages
Datasheet
Download BAV100WL Datasheet


BAV100WL
山东晶导微电子股份有限公司
Jingdao Microelectronics co.LTD BAV100WL THRU BAV103WL
FEATURES
For surface mounted applications
Glass Passivated Chip Junction
Fast reverse recovery time
Ideal for automated placement
Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
Case: SOD-123FL
Approx. Weight:15mg/0.00053oz
PINNING
PIN DESCRIPTION
1 Cathode
2 Anode
12
Simplified outline SOD-123FL and symbol
Absolute Maximum Ratings at 25 °C
Parameter
Symbols BAV100WL BAV101WL BAV102WL BAV103WL Units
Maximum Repetitive Peak Reverse Voltage
VRRM
60
120 200 250 V
Maximum RMS voltage
VRMS
50
100 150 200 V
Continuous Forward Current
IF 250 mA
Repetitive Peak Forward Current
Non-reptitive Peak Forward Surge Current
at 1s
at 1ms
at 1 us
Total Power Dissipation
Typical Thermal Resistance 1
Operating and Storage Temperature Range
1P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
Characteristics at Ta = 25 °C
Parameter
IFRM
IFSM
Ptot
RθJA
Tj, Tstg
625
1
3
9
500
450
-55 ~ +150
mA
A
mW
°C/W
°C
Symbols BAV100WL BAV101WL BAV102WL BAV103WL Units
Reverse BreakdownVoltage at IR=100μA
Maximum Forward Voltage at 100 m A
at 200 m A
Maximum DC Reverse Current Ta = 25 °C
at Rated DC Blocking Voltage Ta =100 °C
Typical Junction Capacitance
at VR=4V, f=1MHz
Maximum Reverse Recovery Time
V(BR)R
VF
IR
Cj
trr
60
120 200
1.00
1.25
0.1
15
5
50
250 V
V
μA
pF
ns
2016.04
SOD123FL-K-BAV100WL~BAV103WL-250mA200V
Page 1 of 3

BAV100WL
山东晶导微电子股份有限公司
Jingdao Microelectronics co.LTD BAV100WL THRU BAV103WL
Fig.1 Forward Current Derating Curve
600
500
400
300
200
100
0.0
25 50 75 100 125 150 175
Ambient Temperature (°C)
Fig.3 Typical Instaneous Forward
Characteristics
1.0
0.1
0.01
0.0
TJ=25°C
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instaneous Forward Voltage (V)
Fig.2 Typical Reverse Characteristics
100
TJ=150°C
10
1
0.1
TJ=25°C
0.01
00 20 40
60 80 100 120
percent of Rated Peak Reverse Voltage (%)
Fig.4 Typical Junction Capacitance
100 TJ=25°C
10
1
0.1 1.0
10
Reverse Voltage (V)
100
2016.04
www.sdjingdao.com
Page 2 of 3


Features Jingdao Microelectronics co.LTD BAV100W L THRU BAV103WL FEATURES ▪ For surfa ce mounted applications ▪ Glass Passi vated Chip Junction ▪ Fast reverse re covery time ▪ Ideal for automated pla cement ▪ Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL D ATA ▪ Case: SOD-123FL ▪ Approx. Wei ght:15mg/0.00053oz PINNING PIN DESCRIP TION 1 Cathode 2 Anode 12 Simplified ou tline SOD-123FL and symbol Absolute Ma ximum Ratings at 25 °C Parameter Sym bols BAV100WL BAV101WL BAV102WL BAV103W L Units Maximum Repetitive Peak Revers e Voltage VRRM 60 120 200 250 V Max imum RMS voltage VRMS 50 100 150 200 V Continuous Forward Current IF 250 mA Repetitive Peak Forward Current No n-reptitive Peak Forward Surge Current at 1s at 1ms at 1 us Total Power Diss ipation Typical Thermal Resistance ( 1) Operating and Storage Temperature Range (1)P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. Cha racteristics at Ta = 25 .
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