Microwave Low Noise
SiGe HBT
KT1151
Spring 2012
KT1151
Microwave Low Noise
SiGe Heterojunction Bipolar Transistor
Features
h Operation Voltage: 10 V h Operating Temperature: –55℃ to +85℃ h Low Noise figure and High Gain
NF=1.0dB (Typ), Ga=12dB (Typ) @VCE=10V,IC=7mA,f=1GHz
h High Power Gain
Gmax=14dB (Typ) @VCE=10V,IC=20mA,f=1GHz
h Cost Effective 3-lead SO...
