TP65H150LSG
650V GaN FET PQFN Series
Preliminary
Description
The TP65H150LSG 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Transphorm GaN offers improved efficiency over silicon, through lower gate...
